Diameter-Dependent Electron Mobility of InAs Nanowires
نویسندگان
چکیده
منابع مشابه
Diameter-dependent electron mobility of InAs nanowires.
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are ...
متن کاملDiameter-dependent conductance of InAs nanowires
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare differ...
متن کاملDiameter dependence of electron mobility in InGaAs nanowires
Related Articles Identification of As-vacancy complexes in Zn-diffused GaAs J. Appl. Phys. 113, 094902 (2013) Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires Appl. Phys. Lett. 102, 091105 (2013) Polycrystalline indium phosphide on silicon using a simple chemical route J. Appl. Phys. 113, 093504 (2013) Impro...
متن کاملTransport coefficients of InAs nanowires as a function of diameter.
InAs nanowires (NWs) have been the subject of intensive research recently in both synthesis and transport studies due to their potential for future high-speed nanoelectronic devices. Back-, top-, and wrap-gate NW fieldeffect transistors (NWFETs) have been employed to study the low-field transport properties of InAs NWs at room temperature. Among these properties, the capacitive effects of inter...
متن کاملDiameter-dependent electromechanical properties of GaN nanowires.
The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, sign...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Letters
سال: 2009
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl803154m